data sheet 1 of 10 rev. 03, 2007-03-09 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTFA081501E ptfa081501f description the PTFA081501E and ptfa081501f are thermally-enhanced, 150-watt, internally matched goldmos ? fets intended for ultra- linear applications. they are characaterized for cdma and cdma2000 operation from 864 to 900 mhz. thermally-enhanced packages provide the coolest operation available. full gold metallization ensures excellent device lifetime and reliability. PTFA081501E package h-30248-2 thermally-enhanced high power rf ldmos fets 150 w, 864 ? 900 mhz is-95 cdma performance v dd = 28 v, i dq = 950 ma, ? = 900 mhz 0 10 20 30 40 50 32 34 36 38 40 42 44 46 48 output power (dbm), avg. drain efficiency (%) -80 -70 -60 -50 -40 -30 adjacent channel power ratio (dbc) t case = 25c t case = 90c efficiency alt1 1.98 mhz adj 750 khz rf characteristics cdma2000 3-carrier measurements ( not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 950 ma, p out = 35 w average, ? = 900 mhz characteristic symbol min typ max unit gain g ps ? 18 ? db drain efficiency h d ? 34 ? % adjacent channel power ratio acpr ? ?50 ? dbc ptfa081501f package h-31248-2 features ? thermally-enhanced packages, pb-free and rohs-compliant ? broadband internal matching ? typical cdma2000 performance at 900 mhz, 28 v - average output power = 35 w - linear gain = 18 db - efficiency = 34% - adjacent channel power = ?50 dbc ? typical cw performance, 900 mhz, 28 v - output power at p?1db = 165 w - efficiency = 62% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 170 w (cw) output power *see infineon distributor for future availability.
PTFA081501E ptfa081501f data sheet 2 of 10 rev. 03, 2007-03-09 rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 950 ma, p out = 150 w pep, ? = 900 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 17 18 ? db drain efficiency h d 44 46 ? % intermodulation distortion imd ? ?30 ?28 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.07 ? w operating gate voltage v ds = 28 v, i dq = 950 ma v gs 2.0 2.48 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 449 w above 25c derate by 2.56 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 150 w cw) r q jc 0.39 c/w ordering information type package outline package description marking PTFA081501E h-30248-2 thermally-enhanced slotted flange, single-ended PTFA081501E ptfa081501f h-31248-2 thermally-enhanced earless flange, single-ended ptfa081501f *see infineon distributor for future availability.
PTFA081501E ptfa081501f data sheet 3 of 10 rev. 03, 2007-03-09 intermodulation distortion vs. output power (as measured in a broadband circuit) v dd = 28 v, i dq = 950 ma, ? 1 = 899 mhz, ? 2 = 900 mhz -80 -70 -60 -50 -40 -30 -20 35 38 41 44 47 50 output power, avg. (dbm) imd (dbc) 3rd order 7th 5th im3 vs. output power at selected biases v dd = 28 v, ? 1 = 899 mhz, ? 2 = 900 mhz -60 -55 -50 -45 -40 -35 -30 -25 36 38 40 42 44 46 48 50 output power, avg. (dbm) imd (dbc) i dq = 950 ma i dq = 675 ma i dq = 1125 ma broadband cw performance v dd = 28 v, i dq = 950 ma, p out = p?1db 16 17 18 19 20 864 870 876 882 888 894 900 frequency (mhz) gain (db) 50 55 60 65 70 efficiency (%), output power (dbm) gain output power efficiency linear broadband performance v dd = 28 v, i dq = 950 ma, p out avg. = 48.75 dbm 20 25 30 35 40 45 50 864 873 882 891 900 frequency (mhz) efficiency (%) -30 -20 -10 0 10 20 30 gain (db), return loss (db) gain return loss efficiency typical performance (data taken in a production test fixture)
PTFA081501E ptfa081501f data sheet 4 of 10 rev. 03, 2007-03-09 output power (at 1 db compression) vs. supply voltage i dq = 950 ma, ? = 900 mhz 51.0 51.5 52.0 52.5 53.0 53.5 54.0 24 26 28 30 32 supply voltage (v) output power (dbm) three-carrier cdma 2000 performance v dd = 28 v, i dq = 950 ma, ? = 900 mhz 0 10 20 30 40 50 36 38 40 42 44 46 48 50 output power (dbm), avg. drain efficiency (%) -60 -55 -50 -45 -40 -35 adj. ch. power ratio (dbc) efficiency acp up alt up acp low power sweep v dd = 28 v, ? = 900 mhz 17 18 19 36 38 40 42 44 46 48 50 52 54 output power (dbm) power gain (db) i dq = 1350 ma i dq = 450 ma i dq = 950 ma gain & efficiency vs. output power v dd = 28 v, i dq = 950 ma, ? = 900 mhz 14 15 16 17 18 19 20 21 36 38 40 42 44 46 48 50 52 54 output power (dbm) gain (db) 0 10 20 30 40 50 60 70 drain efficiency (%) efficiency gain typical performance (cont.)
PTFA081501E ptfa081501f data sheet 5 of 10 rev. 03, 2007-03-09 z source z load g s d frequency z source w z load w mhz r jx r jx 864 13.20 4.69 1.35 4.73 873 13.30 4.75 1.28 4.80 882 13.85 4.94 1.14 4.99 891 14.59 5.00 1.06 5.27 900 15.01 4.91 1.01 5.43 broadband circuit impedance 0 . 1 0 . 3 0 . 5 0 . 2 0 . 4 0 . 1 - w a v e l e n g t h s t o w a r d g e a d - 0 . 0 z source z load 864 mhz 900 mhz 864 mhz 900 mhz z 0 = 50 w typical performance (cont.) bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 1.56 a 3.10 a 4.66 a 6.22 a 7.76 a 9.32 a 10.88 a 12.44 a 14.00 a
PTFA081501E ptfa081501f data sheet 6 of 10 rev. 03, 2007-03-09 a 0 8 1 5 0 1 e f _ s c h 33pf 33pf 7.5pf 7.5pf 2.1pf 33pf 1f 10f 50v 10f 50v v dd l 1 l 7 l 8 10 v r8 dut rf_in c13 c14 c17 c15 c23 c24 c9 c26 rf_out 0.1f c5 10f 35v c4 5.1k r7 0.1 f c6 c10 33pf c8 l 2 l 3 l 4 l 6 7.5pf c11 10pf c12 l 5 c16 0.1f l1 33pf 1f 10f 50v c18 c19 c20 l2 10f 50v c22 c21 0.1f l 9 l 10 l 11 l 13 2.7pf c25 l 12 0.5pf c27 0.01 f c7 10 v r6 r3 2k v r4 2k v c3 0.001f c2 0.001f bcp56 r2 1.3k v r1 1.2k v lm7805 c1 0.001f v dd qq1 q1 r5 5.1 v reference circuit reference circuit block diagram for ? = 900 mhz circuit assembly information dut PTFA081501E or ptfa081501f ldmos transistor pcb 0.76 mm [.030"] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 900 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.016 l , 50.0 w 2.90 x 1.35 0.114 x 0.053 l 2 0.053 l , 50.0 w 9.40 x 1.35 0.370 x 0.053 l 3 0.102 l , 50.0 w 18.29 x 1.35 0.720 x 0.053 l 4 0.045 l , 50.0 w 8.10 x 1.35 0.319 x 0.053 l 5 0.153 l , 68.0 w 27.43 x 0.76 1.080 x 0.030 l 6 0.058 l , 7.5 w 9.40 x 16.26 0.370 x 0.640 l 7, l 8 0.125 l , 50.0 w 22.61 x 1.27 0.890 x 0.050 l 9 0.036 l , 7.9 w 5.72 x 15.24 0.225 x 0.600 l 10 0.141 l , 7.9 w 22.61 x 15.24 0.890 x 0.600 l 11 0.149 l , 38.0 w 26.16 x 2.16 1.030 x 0.085 l 12, l 13 0.013 l , 50.0 w 2.29 x 1.35 0.090 x 0.053 1 electrical characteristics are rounded.
PTFA081501E ptfa081501f data sheet 7 of 10 rev. 03, 2007-03-09 a081501ef_assy c15 c16 c13 c14 c23 c17 l1 c26 c27 c25 c20 c24 c18 c19 l2 c21 c22 r4 qq1 c3 c1 r1 c2 r2 r5 r3 c8 c7 c6 c9 c10 c11 c12 r8 r6 r7 c5 c4 lm 10 35v + q1 rf_in rf_out v dd v dd v dd reference circuit (cont.) reference circuit assembly diagram (not to scale)* component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key pcs6106tr-nd c5, c6, c16, c21 capacitor, 0.1 f, 50 v digi-key p4525-nd c7 capacitor, 0.01 f digi-key 200b 103 c8, c10, c13, c18, ceramic capacitor, 33 pf atc 100b 330 c26 c9 ceramic capacitor, 2.1 pf atc 100b 2r1 c11, c23, c24 ceramic capacitor, 7.5 pf atc 100b 7r5 c12 ceramic capacitor, 10 pf atc 100b 100 c14, c19 capacitor, 1.0 f atc 920c105 c15, c17, c20, c22 tantalum capacitor, 10 f, 50 v garrett electronics tps106k050r0400 c25 ceramic capacitor, 2.7 pf atc 100b 2r7 c27 ceramic capacitor, 0.5 pf atc 100b 0r5 l1, l2 ferrite, 6 mm ferroxcube 53/3/4.6-452 q1 transistor infineon bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor, 2 k-ohms digi-key p2kect-nd r4 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd r5, r7 chip resistor, 5.1 k-ohms digi-key p5.1kect-nd r6, r8 chip resistor, 10 ohms digi-key p10ect-nd *gerber files for this circuit available on request
PTFA081501E ptfa081501f data sheet 8 of 10 rev. 03, 2007-03-09 c l 34.04 [1.340] 19.810.20 [.780.008] 1.02 [.040] 19.43 0.51 [.765.020] (45 x 2.72 [.107]) 2x 12.70 [.500] 2x 4.830.51 [.190.020] 27.94 [1.100] 4x r1.52 [.060] 2x r1.63 [.064] d g s flange 9.78 [.385] 0.0381 [.0015] -a- 248-cases: h-30248-2_po c l c l 3.610.38 [.142.015] sph 1.57 [.062] [.370 ] +.004 ?.006 lid 9.40 +0.10 ?0.15 package outline specifications package h-30248-2 diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron (min) [100 microinch (min)] d, g - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products
PTFA081501E ptfa081501f data sheet 9 of 10 rev. 03, 2007-03-09 c l 0.0381 [.0015] 2x 12.70 [.500] 19.430.51 [.765.020] 19.810.20 [.780.008] sph 1.57 [.062] flange 9.78 [.385] s g d ( 45 x 2.72 [.107]) 20.57 [.810] -a- 3.610.38 [.142.015] 1.02 [.040] 2x 4.830.51 [.190.020] 248-cases: h-31248-2_po c l c l [r.020 ] +.015 ?.005 4x r0.508 +0.381 ?0.127 lid 9.40 +0.10 ?0.15 [.370 ] +.004 ?.006 package outline specifications (cont.) package h-31248-2 diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron (min) [100 microinch (min)] d, g - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products *see infineon distributor for future availability.
data sheet 10 of 10 rev. 03, 2007-03-09 PTFA081501E/f confidential, limited internal distribution revision history: 2007-03-09 data sheet previous version: 2005-07-20, data sheet page subjects (major changes since last revision) all update infineon information and logo. 1 add information about rohs compliance. 1, 2, 9 show ptfa081501f as a released products 1, 2, 8, 9 revise package designations and diagrams. goldmos ? is a registered trademark of infineon technologies ag. edition 2007-03-09 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2005. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international
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